| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing technology which is capable of discriminating a state change inside a reaction chamber or a spot at which a fault occurs, and furthermore predicting a state change inside the reaction chamber or a spot at which a fault may occur and its type. <P>SOLUTION: The plasma processing device is equipped with a reaction chamber, a specimen base equipped with a static adsorption electrode, a gas discharge plate, a bias high-frequency power supply, and a static adsorption power supply. Furthermore, the plasma processing device is equipped with a control device which is provided with, at least, one of three monitors; an adsorption current monitor (Ip) that monitors a current supplied from the static adsorption power supply, a plasma formation-side impedance monitor (Zp) that monitors the impedance of plasma from a view point of the plasma forming high-frequency power supply, and a bias application-side impedance monitor (Zb) that monitors the impedance of plasma from a viewpoint of the bias high-frequency power supply; and judges whether one of phenomena, such as an abnormal discharge that occurs in the inner parts, insulation deterioration in an insulating film of the static adsorption electrode, and the abnormal discharge of the gas discharge plate, occurs or not on the basis of the monitored values. <P>COPYRIGHT: (C)2007,JPO&INPIT |
