| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which does not deteriorate the reliability of wiring even though etching a barrier metal layer by sputtering. SOLUTION: An inter layer insulating film composed of an insulating material is formed on a semiconductor substrate. On the inter layer insulating film, a via hole reaching its bottom surface is formed. A burying member is filled into a part of underside in the via hole. Wiring groove, which reaches halfway in a direction of the thickness of the inter layer insulating film and is continuous to the via hole in a plane view, is formed. At this time, in a condition that an etching rate of the inter layer insulating film is faster than an etching rate of the burying material, the wiring groove is formed so that a difference of height between the upper surface of the burying material remained in the via hole and the bottom surface of the wiring groove is 1/2 of the maximum dimension of plane figure of the via hole or less. The burying material in the via hole is removed. A conductive material is filled into the via hole and wiring groove. COPYRIGHT: (C)2007,JPO&INPIT
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