| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method that enables to expand a process window for growing a group III-V compound semiconductor including nitrogen as a group V. SOLUTION: In the method for growing a group III-V compound semiconductor layer including nitrogen and other elements as a group V is composed, an organic nitrogen material G4 is at least partially decomposed by heating the organic nitrogen material G4 for growing the group III-V compound semiconductor layer by using a heater 59. The group III-V compound semiconductor layer is grown on a substrate W by supplying the decomposed material to a reaction chamber 57 of an organometallic vapor-phase growth furnace 51, after at least partially decomposing the organic nitrogen material G4. The organic nitrogen material includes at least any one of dimethylhydrazine, monomethylhydrazine, and tertiarybutylhydrazine. COPYRIGHT: (C)2007,JPO&INPIT
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