| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a correction process of charged particle beam exposure data effectively correcting a pattern variation by an etching process. SOLUTION: The manufacturing method comprises: a charged particle beam exposure process of exposing a resist film in accordance with exposure data including exposure pattern data and exposure quantity data; an etching process of etching a film to be etched using as a mask a resist pattern exposed and developed in the exposure process; a process of constructing a pattern size database having measured pattern size data corresponding to any one of every manufacturing lot, every etching apparatus, every pattern density, every upper or lower step difference under the film to be etched, and every pattern, or plurality thereof by measuring a pattern size of the film to be etched; and an etching correction process of exposure data of correcting exposure pattern data of exposure data or the exposure data, so as to absorb a pattern variation by the etching process, based on the pattern size database. COPYRIGHT: (C)2007,JPO&INPIT
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