| 摘要 |
PROBLEM TO BE SOLVED: To provide a simpler fabrication process of a semiconductor device having a gate insulation layer formed in normal pressure, low temperature process in a short time. SOLUTION: In the fabrication process of a semiconductor device having a gate electrode, a gate insulation layer, a semiconductor layer, a source electrode and a drain electrode, the gate insulation layer is formed by irradiating microwave. COPYRIGHT: (C)2007,JPO&INPIT
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