| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having excellent copper diffusion prevention capability and forming a barrier metal film assuring close contact with copper wiring. SOLUTION: The manufacturing method of semiconductor device comprises a step of forming, to an upper surface of a fourth interlayer insulating film 16 and an internal surface of a via hole 16a, a barrier metal film 18 formed of a nitride of titanium group elements with the reactive sputtering method using a mixed gas of rare gas and nitrogen gas. The step of forming the barrier metal film 18 includes a first sputtering step and a second sputtering method. In the second sputtering method, a flow ratio of the nitrogen gas in the mixed gas is set lower than that in the first sputtering step, and thickness of the barrier metal film 18 is reduced at the bottom of the via hole 16a formed in the first sputtering step. COPYRIGHT: (C)2007,JPO&INPIT
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