发明名称 HIGH PRESSURE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a technology for performing film deposition with high in-plane uniformity by solving the problem of temperature stability of a stage heater based on low thermal conductivity of a pressure withstanding vessel, when a film is deposited on a substrate by supplying processing fluid containing supercritical fluid and film deposition material into the pressure withstanding vessel. SOLUTION: A pressure withstanding vessel is constituted to have an inner film deposition space F formed by an upper lid 21 of the apparatus body 2, a pressure withstanding frame 20, and a stand 3 for mounting a wafer W. The pressure withstanding vessel is provided with a stage heater 4 mounting a wafer W and provided with a heating element; a heat insulation layer 51 provided on the lower side of the stage heater 4 and having a thermal conductivity lower than that of the material of the pressure withstanding vessel; and a temperature regulation layer 53 provided with a temperature regulating portion for delivering/receiving heat to/from the outside of the pressure withstanding vessel, and interposed between the heat insulation layer 51 and the mounting stand body 31 forming the base portion of the pressure withstanding vessel. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007250589(A) 申请公布日期 2007.09.27
申请号 JP20060068107 申请日期 2006.03.13
申请人 TOKYO ELECTRON LTD;KONDO HIDEKAZU 发明人 MATSUMOTO KENJI;KOMIYA TAKAYUKI;KONDO HIDEKAZU
分类号 H01L21/285;C23C16/18;C23C16/452 主分类号 H01L21/285
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