Semiconductor device and method for forming the same

摘要

A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second portions ( 44, 54 ). The first portions ( 44 ) may have a first thickness, and the second portions ( 54 ) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality of second semiconductor regions ( 42 ) within the semiconductor substrate may each be positioned at least one of directly below and directly above a respective one of the first portions ( 44 ) of the first semiconductor region and laterally between a respective pair of the second portions ( 54 ) of the first semiconductor region. A third semiconductor region ( 56 ) within the semiconductor substrate may have the first dopant type. A gate electrode ( 64 ) may be over at least a portion of the first semiconductor region and at least a portion of the third semiconductor region ( 56 ).