发明名称 |
Stress intermedium engineering |
摘要 |
Embodiments of the invention provide structures and methods for forming a strained MOS transistor. A stressor layer is formed over the transistor. Embodiments include an intermedium layer between the stressor layer and a portion of the transistor. In an embodiment, the intermedium comprises a layer formed between the stressor layer and the gate electrode sidewall spacers. In another embodiment, the intermedium comprises a silicided portion of the substrate formed over the LDS/LDD regions. A transistor that includes the intermedium and, stressor layer has a vertically oriented stress within the channel region. The vertically oriented stress is tensile in a PMOS transistor and compressive in an NMOS transistor.
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申请公布号 |
US2007222035(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20060387601 |
申请日期 |
2006.03.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG CHIEN-CHAO;YANG FU-LIANG |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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