Analog silicon-on-insulator semiconductor circuit arrangement, has diode doped region formed in active semiconductor region of specific conductive type up to surface of insulating layer, and measuring diode realized over diode side

摘要

The arrangement has an insulating layer (2) formed on a semiconductor substrate (1). An active semiconductor region (AA) is formed on the insulating layer. Source and drain regions of a multi-gate FET are formed in the active region. A diode doped region is formed in the active semiconductor region of a specific conductive type up to a surface of the insulating layer. A measuring diode is realized over a diode side with the source and drain regions and is bordered at a side by another insulating layer (4). An independent claim is also included for a method for temperature determination in a semiconductor circuit arrangement.