| 摘要 |
An optimized electrode structure of an LED is provided to reduce an operation voltage and resistance and to distribute uniformly a current density by reducing a current flowing length using a P type electrode pad formed at an outer portion of the LED and an N type electrode pad formed at an inner portion of the LED. An optimized electrode structure of an LED includes a P type electrode pad, a P type auxiliary electrode, an N type electrode pad, and an N type auxiliary electrode. The P type electrode pad(25) is formed at an edge center portion of one side of a P type transparent electrode layer. The P type auxiliary electrode(26) are extended from both sides of the P type electrode pad along the edge of one side of the P type transparent electrode layer. The N type electrode pad(27) is formed on an N type semiconductor layer by etching selectively a P type semiconductor layer and the P type transparent electrode layer. The N type auxiliary electrode(28) is protruded from both sides of the N type electrode pad. The N type auxiliary electrode is arranged with the P type auxiliary electrode parallel with each other. |
