| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element array capable of preventing flow of a current from an upper electrode to an immediate below portion and ensuring conduction between a substrate electrode and a light emitting element without allowing a semiconductor multilayer mirror to employ an embedding structure requiring re-growth of an epitaxial layer. <P>SOLUTION: A reflection layer 25, a p-type first layer 24, an n-type second layer 23, a p-type third layer 22 and an n-type fourth layer 21 are successively formed on a p-type substrate 51. A cathode electrode 36 is formed on the fourth layer 21, a gate electrode 37 is formed on the third layer 22 partially exposed by etching, and a short circuit electrode 63 connects the fourth layer 24 partially exposed by etching to the substrate 51 exposed by etching. A rear surface common electrode 53 is formed on the rear surface of the substrate 51. <P>COPYRIGHT: (C)2007,JPO&INPIT |
