| 摘要 |
A method of manufacturing a semiconductor device includes: forming a first photosensitive material pattern having an opening hole on a work target layer formed on an active surface of a substrate; performing a first etching by performing an etching treatment to the work target layer using the first photosensitive materialpattern as a mask, and forming one of a concave and a groove in a tapered shape with a wide opening to the work target layer while enlarging the opening hole, by performing the etching treatment so as to enlarge the opening hole; and filling a metal film into one of the concave and the groove.
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