Trench power transistor e.g. lamellar trench power transistor, manufacturing method, involves selecting implantation energy and dose so that principal part of dose is placed below source electrode, and pinch resistance of contact is reduced

摘要

The method involves implementing a foreign particle implantation for producing a body contact (13) or body amplification as a transverse implantation that provides a predetermined tilting angle for verticals on a plane of a semiconductor material. The implantation is directed to front sided ends of active trench regions (10). Implantation energy and dose of the transverse implantation are selected in such a way that a considerable part of the dose of the transverse implantation is placed below a source electrode, and pinch resistance of the body contact is reduced. An independent claim is also included for a trench power transistor.