| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a patterning method in which a first drawing pattern and a second drawing pattern are aligned with high accuracy when patterns are drawn as overlapped to form a pattern by using a plurality of patterning steps by use of a photolithographic process on the same substrate. <P>SOLUTION: The patterning method includes a step of forming a pattern by using a plurality of patterning steps by use of a photolithographic process on the same substrate, and the method includes steps of preparing a substrate on which an alignment mark to be used for alignment is formed, drawing a first pattern by aligning using the above alignment mark, and drawing a second pattern by aligning using the above alignment mark. <P>COPYRIGHT: (C)2007,JPO&INPIT |
