发明名称 MANUFACTURING METHOD OF POWER MOSFET AND POWER MOSFET
摘要 <p><P>PROBLEM TO BE SOLVED: To suppress external resistance of a power MOSFET. <P>SOLUTION: On a first face of a pellet 10 of a power MOSFET, a source electrode pad 20 and a gate electrode pad 19 are arranged, and on a second face thereof a drain electrode pad 21 is arranged. Inner leads 37, 36 and 35 are connected to the source electrode pad 20, the gate electrode pad 19 and the drain electrode pad 21, respectively, and outer leads are connected to them, respectively, corresponding to the inner leads. The source electrode pad 20 is electrically and mechanically connected to the inner lead 37 at a source joint 22 where the inner lead 37 is branched into multiple leads. The pellet 10 and the inner leads 37, 36 and 35 are sealed with a resign sealing body 44. By connecting the source electrode to the inner lead at multiple joints, the external resistance is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007251218(A) 申请公布日期 2007.09.27
申请号 JP20070178011 申请日期 2007.07.06
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMADA TOMIO;MURAKAMI HAJIME
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
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