| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device comprising an FIN type FET memory cell having a low contact resistance to the source-drain region and electrical characteristics stabilized as compared with prior arts, and also to provide its fabrication process. <P>SOLUTION: The semiconductor memory device comprises: an insulation layer 20; an FIN type semiconductor layer 45 provided on the insulation layer and including an electrically floating body region R2 and a source-drain region R1 on the opposite sides of the floating body region; a gate insulating film 50 formed on the opposite side faces of the floating body region, a gate electrode 70 provided on the opposite sides of the floating body region through the gate insulating film, and source-drain electrodes SL and BL touching the upper surface of the source-drain region. On the cross-section cutting the FIN type semiconductor layer in parallel with the surface of the insulation layer, thickness D2 of the FIN type semiconductor layer in the floating body region is thinner than the thickness D1 of the FIN type semiconductor layer in the source-drain region. <P>COPYRIGHT: (C)2007,JPO&INPIT |
