| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and method for depositing a thin film on a processing target alternately given with source gas compartments and purge gas compartments in a susceptor rotating direction. <P>SOLUTION: The apparatus for depositing the thin film on a processing target includes: a reaction space; a susceptor 1 movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, in which when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in the susceptor-rotating direction of the susceptor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
