| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a resist laminate having a satisfactory antireflection effect in a photolithography process using light in a vacuum ultraviolet region, and also having satisfactory development properties in a development process. <P>SOLUTION: A method for forming the photoresist laminate is provided which includes a step of forming a photoresist layer on a substrate, and a step of forming an antireflection layer by applying a coating composition comprising a fluorine-containing polymer comprising 0.1-100 mol% of a structural unit derived from a fluorine-containing monomer of formula (1). <P>COPYRIGHT: (C)2007,JPO&INPIT |
