发明名称 |
SURFACE TREATMENT OF INTER-LAYER DIELECTRIC |
摘要 |
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for dense higher dielectric materials. Embodiment of the present invention may provide a method of forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes steps of treating an exposed area of said ILD material to create a densified area, and metallizing said densified area.
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申请公布号 |
US2007222081(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20060308422 |
申请日期 |
2006.03.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINE CORPORATION |
发明人 |
CHEN SHYNG-TSONG;LIN QINGHUNG;MALONE KELLY;MEHTA SANJAY;SPOONER TERRY A.;YANG CHIH-CHAO |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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