| 摘要 |
FIELD: electronic devices. ^ SUBSTANCE: proposed GaAs ionizing radiation detector has substrate that carries contacts, substrate boundary semi-insulating GsAs layer, and barrier contact. Detector also incorporates Ga1-xAlxAs insulating layer having common boundary with semi-insulating GaAs layer, non-doped GaAs layer having common boundary with Ga1-xAlxAs insulating layer, p region in non-doped GaAs and insulating GaAlAs layers up to semi-insulating GaAs layer, and high-resistance region around barrier contact periphery. ^ EFFECT: enhanced threshold sensitivity and resolving power of detector enabling detection of weak ionizing flows. ^ 1 cl, 1 dwg |
