发明名称 CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad excellent in polishing speed even if a supply amount of aqueous dispersion element for chemical mechanical polishing is little and excellent in inplane uniformity in polishing amount on a polished surface, and a chemical mechanical polishing method using the same. <P>SOLUTION: The chemical mechanical polishing pad has a polishing surface and a non-polishing surface that is the backside thereof. The polishing surface has a groove or a group of grooves having a width of 0.1 mm or more and a depth of 0.8 mm or more and a total volume of 0.022 ml/cm<SP>2</SP>or less per unit area of the polishing surface. In the chemical mechanical polishing method, a polished object is chemically and mechanically polished by using the chemical mechanical polishing pad. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007245291(A) 申请公布日期 2007.09.27
申请号 JP20060072521 申请日期 2006.03.16
申请人 JSR CORP 发明人 TSUJI AKIMORI;MIHARA ITSUKI;MIYAUCHI HIROYUKI;ABE TAICHI
分类号 B24B37/20;H01L21/304 主分类号 B24B37/20
代理机构 代理人
主权项
地址