SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having a structure which does not require process of p-type semiconductor for confinement of current. SOLUTION: A first gallium nitride-based semiconductor layer 17 covers the whole major surface 15a of an active layer 15. A second gallium nitride-based semiconductor layer 19 covers the whole major surface 17a of the first gallium nitride-based semiconductor layer 17. A first electrode 21 is provided on the second gallium nitride-based semiconductor layer 19. A first region 17a and a second region 17b of the first gallium nitride-based semiconductor layer 17 are arranged along the active layer 15. The concentration Na17cof a non-activated p-type dopant 17c in the first region 17a of the first gallium nitride-based semiconductor layer 17 is lower than the concentration Na17bof a non-activated p-type dopant 25b in the second region 17b. The first specific resistance of the first region 17a of the first gallium nitride-based semiconductor layer 17 is smaller than the second specific resistance of the second region 17b. COPYRIGHT: (C)2007,JPO&INPIT