| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas sensor having a high gas selectivity, that is usable at the normal temperature and easy to manufacture, and to provide its manufacturing method. SOLUTION: Two kinds of different materials obtained, by adding impurities to iron silicide are formed on an insulating substrate 14, and a Pt catalyst film 18, having the selectivity of a hydrogen gas, is laminated on one end part of each of the respective materials, while an electrode 20 is formed to the other end part of the respective materials. Two kinds of the different materials of iron silicide are comprise a layer (p-type), containingβ-FeSi<SB>2</SB>or a component capable of formingβ-FeSi<SB>2</SB>and an acceptor and a layer (n-type), containingβ-FeSi<SB>2</SB>or the component capable of formingβ-FeSi<SB>2</SB>and a donor. COPYRIGHT: (C)2007,JPO&INPIT
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