Manufacturing method of semiconductor device and etching solution

摘要

This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution having ozone dissolved by 10 ppm or more into a liquid containing H₂SO₄ by 86 wt % to 97.9 wt %, HF by 0.1 wt % to 10 wt %, and H₂O by 2 wt % to 4 wt %.