A semiconductor surface processing method in one example comprises disposing a polishing pad in rotating engagement with a semiconductor wafer to be polished, dripping a first polishing solution onto the polishing pad at a first drip rate, and, concurrently, dripping a second polishing solution onto the polishing pad at a second drip rate.
申请公布号
WO2007108886(A2)
申请公布日期
2007.09.27
申请号
WO2007US04521
申请日期
2007.02.16
申请人
NORTHROP GRUMMAN CORPORATION;SANDHU, RAJINDER, R.;JOHNSON, ROOSEVELT;MONIER, CEDRIC;GUTIERREZ-AITKEN, AUGUSTO
发明人
SANDHU, RAJINDER, R.;JOHNSON, ROOSEVELT;MONIER, CEDRIC;GUTIERREZ-AITKEN, AUGUSTO
