发明名称 ALL-INKJET PRINTED THIN FILM TRANSISTOR
摘要 A method is provided for making a thin film transistor comprising the steps of: providing a substrate; applying a gate electrode ink by inkjet printing; applying a dielectric ink over by inkjet printing; applying a semiconductor ink by inkjet printing; and applying a source and drain electrode ink by inkjet printing. In some embodiments the semiconductor ink comprises a solvent and a semiconducting material comprising: 1-99.9% by weight of a polymer; and 0.1-99% by weight of a functionalized pentacene compound as described herein.
申请公布号 WO2007078860(A8) 申请公布日期 2007.09.27
申请号 WO2006US47771 申请日期 2006.12.14
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 NELSON, BRIAN K.;VOGEL, DENNIS E.;NAPIERALA, MARK, E.;LEE, TZU-CHEN
分类号 H01L29/786 主分类号 H01L29/786
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