A method is provided for making a thin film transistor comprising the steps of: providing a substrate; applying a gate electrode ink by inkjet printing; applying a dielectric ink over by inkjet printing; applying a semiconductor ink by inkjet printing; and applying a source and drain electrode ink by inkjet printing. In some embodiments the semiconductor ink comprises a solvent and a semiconducting material comprising: 1-99.9% by weight of a polymer; and 0.1-99% by weight of a functionalized pentacene compound as described herein.
申请公布号
WO2007078860(A8)
申请公布日期
2007.09.27
申请号
WO2006US47771
申请日期
2006.12.14
申请人
3M INNOVATIVE PROPERTIES COMPANY
发明人
NELSON, BRIAN K.;VOGEL, DENNIS E.;NAPIERALA, MARK, E.;LEE, TZU-CHEN