SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to improve the reliability of device operation by preventing the generation of delamination between hetero layers in a heat treatment by interposing a stress buffer layer between the hetero layers. A semiconductor device includes a first layer, a second layer and a stress buffer layer. The first layer(29) has a first stress. The second layer(37) is formed on the first layer. The second layer has a second stress. The stress buffer layer(35) is interposed between the first and the second layers. The stress lessening layer contains simultaneously the elements of the first and the second layers. The stress buffer layer is formed like a stacked structure composed of two or more layers.