METHOD FOR PRODUCING SiC SUBSTRATE, SiC SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce not only micropipes but also basal plane dislocations and stacking faults, in a method for producing an SiC substrate, the SiC substrate and a semiconductor device. SOLUTION: In the method for producing the SiC substrate, an SiC epitaxial growth layer 2 is grown on an SiC single crystal substrate 1 having micropipes by a chemical vapor deposition method. The method includes a process for ion-implanting hydrogen or a rare gas element to the vicinity of the surface of the SiC single crystal substrate 1 or to an intermediate area of the SiC epitaxial growth layer 2 under a condition free of blistering. COPYRIGHT: (C)2007,JPO&INPIT