| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an oxide thin film capable of shortening a time required for a film forming, simplifying a film forming device, and enhancing an application efficiency of a raw gas. SOLUTION: The method for forming the oxide thin film on the surface of an object to be oxidized (1) comprises the steps of filling an ozone gas having not less than an explosion critical concentration into a sealed chamber (2) with the object (1) housed, forcibly decomposing the ozone gas by leberating an igniting source (7) to the ozone gas filled in the chamber (2), and forming the oxide thin film on the surface of the object (1) by sending an oxygen radical generated by the decomposition and the decomposition reaction heat to the surface of the object (1). COPYRIGHT: (C)2007,JPO&INPIT
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