| 摘要 |
PROBLEM TO BE SOLVED: To fully remove damage caused by recess-etching without deteriorating a worked shape of a device, thereby allowing an SiGe layer with good crystalline conditions to epitaxially grow sufficiently on an etched surface where a silicon substrate has been recess-etched. SOLUTION: A gate electrode is formed on the silicon substrate via a gate insulation film (S1). The surface layer of the silicon substrate is dug down by etching while using the gate electrode as a mask (S2). An oxide film is grown on the dug surface of the silicon substrate by oxidation (S3-S5). The oxide film is removed by surface gas etching reaction (COR) for performing treatment for supplying fluorinated acid gas and ammonia gas and subsequent heat treatment (S6). After the growth and the removal of the oxide film are repeated twice, a silicon germanium layer is epitaxially grown on a surface from which the oxide film is removed (S9). COPYRIGHT: (C)2007,JPO&INPIT
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