| 摘要 |
An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WO<SUB>X</SUB>) made of tungsten oxide is formed in superimposition, followed by annealing.
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