发明名称 |
Semiconductor laser device and fabrication method therefor |
摘要 |
A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
|
申请公布号 |
US2007223550(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20070727229 |
申请日期 |
2007.03.26 |
申请人 |
FUJIMOTO YASUHIRO;TAKAYAMA TORU;MURASAWA SATOSHI;NAKAYAMA HISASHI;KIDOGUCHI ISAO |
发明人 |
FUJIMOTO YASUHIRO;TAKAYAMA TORU;MURASAWA SATOSHI;NAKAYAMA HISASHI;KIDOGUCHI ISAO |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|