发明名称 |
METHOD OF FORMING SILICIDED GATE STRUCTURE |
摘要 |
A method of forming a silicided gate on a substrate having active regions is provided. The method comprises forming silicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after the forming step; forming a coating layer over portions of the shielding layer over the active regions; opening the shielding layer to expose the gate, wherein the coating layer protects the portions of the shielding layer over the active regions during the opening step; depositing a metal layer over the exposed gate; and annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate.
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申请公布号 |
US2007222000(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20070756131 |
申请日期 |
2007.05.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHAN BOR-WEN;SHIEH JYU-HORNG;TAO HUN-JAN |
分类号 |
H01L27/088;H01L21/28;H01L21/336;H01L21/44;H01L29/40 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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