| 发明名称 |
FIELD EFFECT TRANSISTOR WITH GATE INSULATION LAYER FORMED BY USING AMORPHOUS OXIDE FILM |
| 摘要 |
<p>A field effect transistor includes a channel layer 11, a source electrode 13, a drain electrode 14, a gate insulation layer 12 and a gate electrode 15 formed on a substrate 10. The channel layer is made of an amorphous oxide and that the gate insulation layer is made of an amorphous oxide containing Y.</p> |
| 申请公布号 |
WO2007108527(A1) |
申请公布日期 |
2007.09.27 |
| 申请号 |
WO2007JP55939 |
申请日期 |
2007.03.15 |
| 申请人 |
CANON KABUSHIKI KAISHA;KAJI, NOBUYUKI;YABUTA, HISATO |
发明人 |
KAJI, NOBUYUKI;YABUTA, HISATO |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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