| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition superior in dissolution contrast by solving problems of performance improvement technology in micro-fabrication of a semiconductor element using an active optical beam or radiation, in particular, a KrF excimer laser beam, an electron beam or EUV light, and simultaneously satisfying high sensitivity, high resolution, excellent pattern shape and excellent density independence, and to provide a pattern-forming method using it. <P>SOLUTION: The positive resist composition contains (A) a compound generating acid by irradiation of an active optical beam or radiation, and (B) a resin of a specific structure increasing dissolubility to alkaline developer by action of acid. The pattern-forming method using it is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
