| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor single crystal substrate, its manufacturing method, and a method of manufacturing a vertical structure nitride light emitting element using the same. <P>SOLUTION: In a nitride single crystal substrate 22, a first side surface has a thickness of 100 μm or more, is defined into an upper region 22b and a lower region 22a in the direction of thickness, and the doping concentration of the upper region 22b is five times or more the doping concentration of the lower region 22a. Preferably, the top surface of the substrate 22, corresponding to the upper region 22b, has a Ga polarity. In a specific embodiment, the lower region 22a may be a region not doped intentionally and the upper region 22b may be doped with n-type impurities. In this case, preferably, the upper and lower regions 22b, 22a have substantially the same doping concentration in the direction of thickness, respectively. Further, a method of manufacturing the nitride single crystal substrate 22 and a method of manufacturing a vertical structured nitride light emitting element using the same are also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
