| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element which has a simple structure and offers high emission efficiency. <P>SOLUTION: The semiconductor optical element 10 includes a first conductive GaAs board 12, a group third-fifth compound semiconductor layer 14 formed on the GaAs board 12, an active layer 16 formed on the group third-fifth compound semiconductor layer 14, and a second conductive upper clad layer 18 formed on the active layer 16. The band gap energy (Eg2) of the group third-fifth compound semiconductor layer 14 is larger than the band gap energy (Eg1) of the GaAs board 12. The band gap energy (Eg3) of the active layer 16 is smaller than the band gap energy (Eg1) of the GaAs board 12. The thickness of the group third-fifth compound semiconductor layer 14 is equal to or less than 0.2 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
