发明名称 WIRING STRUCTURE OF LSI
摘要 PROBLEM TO BE SOLVED: To provide a wiring structure of LSI reducing wiring capacitance C and wiring delay RC. SOLUTION: In a wiring structure having multilayered wiring layers, dielectric ratio of an insulating layer between wirings in a wiring width direction is relatively higher than the one in a wiring thickness direction in an upper wiring layer and the dielectric ratio of the insulating layer between wirings in the wiring thickness direction is relatively higher than the one in the wiring width direction in a lower wiring layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007251212(A) 申请公布日期 2007.09.27
申请号 JP20070167026 申请日期 2007.06.25
申请人 TOSHIBA CORP 发明人 SHIGYO NAOYUKI;YAMAGUCHI TETSUYA
分类号 H01L21/82;H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L23/522;H01L27/04 主分类号 H01L21/82
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