| 摘要 |
1,078,407. Photographic process. INTERNATIONAL BUSINESS MACHINES CORPORATION. March 26, 1965 [June 1, 1964], No.13071/65. Heading G2C. Layers of a sulphide, selenide, or telluride of Zn, Cd or Hg are etched imagewise by exposing the layer to light having a photon energy greater than the band gap (as defined) of the compound forming the layer, the layer being in an oxidizing medium at a temperature sufficiently high for one or more oxides of the sulphur, selenium, or tellurium to be formed and removed and at a temperature sufficiently low that the rate of formation of the image in the exposed areas is greater than the total rate of oxidation and evaporation of the unexposed areas. The oxidizing atmosphere may be a mixture of oxygen and water, and the layer may be on a support, e. g. of glass, metal, rubber or a fluorinated hydrocarbon polymer. |
