<p>A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.</p>
申请公布号
WO2007109491(A2)
申请公布日期
2007.09.27
申请号
WO2007US64038
申请日期
2007.03.15
申请人
APPLIED MATERIALS, INC.;CARLSON, DAVID K.;KUPPURAO, SATHEESH;SANCHEZ, ERROL ANTONIO C.;BECKFORD, HOWARD;KIM, YIHWAN
发明人
CARLSON, DAVID K.;KUPPURAO, SATHEESH;SANCHEZ, ERROL ANTONIO C.;BECKFORD, HOWARD;KIM, YIHWAN