A METHOD OF MANUFACTURING HIGH QUALITY ZnO MONOCRYSTAL FILM ON SILICON(111) SUBSTRATE

摘要

There is provided a method of manufacturing high quality ZnO monocrystal film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.