| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem in multilayering the interconnection of a CSP (chip size package) structure of a semiconductor device having the CSP structure with columnar electrodes with prescribed heights which suppress adverse effect of thermal stress, that the choice between a suppressing of increase of a thickness of the semiconductor device by making the heights of the columnar electrodes lower and an assuring of preferable heights of the columnar electrodes by increasing the thickness of the semiconductor device, having merits and demerits respectively, has been conventionally required. <P>SOLUTION: In the semiconductor device, sunken parts 20 connected to a first layer interconnection 7 are shaped on a second layer interconnection 12 at positions of via holes 15 formed through a second insulation layer 10 interposed between the first layer interconnection 7 and the second layer interconnection 12, the columnar electrodes 14 are so constituted that they erect from the bottom faces of the sunken parts 20, and an uppermost insulation layer 16 without filler material is formed in such a way that it covers the second insulation layer 10 and the second layer interconnection layer 12. <P>COPYRIGHT: (C)2007,JPO&INPIT |
