发明名称 METALLIC LAYER DEPOSITION SYSTEM FOR REDUCING PARTICLE FORMATION AND VAPOR PHASE RAW MATERIAL DISTRIBUTION SYSTEM AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method and system for reducing particle contamination in a vapor phase raw material distribution system. SOLUTION: The vapor phase raw material distribution system 30 comprises a vapor phase raw material distribution head 34 having a plurality of openings configured to introduce a vapor phase raw material of the film precursor to a process chamber 10 of a deposition system 1, and a housing. The housing and the vapor phase raw material distribution head 34 define a plenum 32 coupled to a film precursor evaporation system 50, and configured to receive the vapor phase raw material of the film precursor 52 from the evaporation system 50 and distribute the vapor phase raw material to the process chamber 10 through the plurality of the openings. In order to reduce type particle contamination, the vapor phase raw material distribution system 30 is designed to reduce the difference, or ratio, between the pressure in the plenum 32 and the pressure in the deposition system. For example, the plenum 32 pressure can be less than twice the pressure in the process space 33, or can be less than 50 mTorr, 30 mTorr or even 20 mTorr than the pressure in the process space 33. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007247062(A) 申请公布日期 2007.09.27
申请号 JP20070063610 申请日期 2007.03.13
申请人 TOKYO ELECTRON LTD;TOKYO ELECTRON AMERICA INC 发明人 SUZUKI KENJI;HARA MASAMICHI;GOMI ATSUSHI;MIZUSAWA YASUSHI
分类号 C23C16/455;C23C16/448;H01L21/28;H01L21/285;H01L21/3205;H01L23/52 主分类号 C23C16/455
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