| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride crystal that can be used for an optical device or an electronic device. SOLUTION: A gas purifying device 320 circulates Ar gas containing oxygen by 10 ppm or less and/or water content by 10 ppm or less to and from the inner space 301 of a globe box 300 via pipes 330, 340. A reaction chamber 10A disposed inside an external reaction chamber 20 in the glove box 300 is exchanged for a new reaction chamber 10B; metal Na and metal Ga in a predetermined molar ratio are introduced into the new reaction chamber 10B as well as metal Na is disposed between the new reaction chamber 10B and the external reaction chamber 20; a cap 22 is adhered with a metal seal to the main body 21 of the external reaction chamber 20; the reaction chamber 10B with the external reaction chamber 20 is heated up to 800°C while nitrogen gas is supplied into the reaction chamber 10B to grow a GaN crystal. COPYRIGHT: (C)2007,JPO&INPIT
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