| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-treating apparatus capable of improving throughput and yields and improving the treatment condition in substrates to be treated and that between the substrates to be treated. SOLUTION: In a batch-type plasma treating apparatus 10, a plurality of stages of susceptor electrodes 50 for placing a wafer 1 are arranged in a treatment chamber 32 at a prescribed interval, power is supplied to each stage of susceptor electrode 50 for generating plasma, and the wafer 1 placed on each stage of susceptor electrode 50 is subjected to plasma treatment. In the batch type plasma-treating apparatus 10, three support bars 26, 27, 28 in which the center is long and both sides are short are provided at tweezers 25 for transferring the wafer 1, and the three support bars support the three points on the lower surface of the outer periphery of the wafer 1. Three insertion sections 52, 53, 54 into which three support bars are inserted are established in each stage of susceptor electrode 50. Since a plurality of wafers can be simultaneously transferred to a plurality of stages of susceptor electrodes, throughput is improved. By preventing contact of the tweezers to the insertion section, particles are prevented from being generated and improving yields. COPYRIGHT: (C)2007,JPO&INPIT |
