| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric film capacitor in which a sufficient yield for adapted to ULSI chips can be secured. SOLUTION: In one embodiment, after the formation of a first ferroelectric film as the capacitor ferroelectric film, an extremely thin second ferroelectric film is deposited to fill a cavity generated between the crystal grains, thereby forming a capacitor in which a leakage current is reduced and a yield is high. In the other embodiment, the cavity is filled with an insulating layer. COPYRIGHT: (C)2007,JPO&INPIT
|
