| 摘要 |
PROBLEM TO BE SOLVED: To correct failures and defects of a thermohardening type or photo-hardening type transferred rough pattern caused when peeling off from an original in the nano imprint lithography and reduce the failures of device of a wafer after dry etching. SOLUTION: A liquid photo-hardening resin 2 is supplied from an opening of tip of a mirco pipet 1 of a scanning-type micro pipptte probe microscope to the failure portion 3 of the rough pattern transferred from the original which is made by hardening a photo-hardening resin in the nano imprint lithography to harden the photo-hardening resin 2 irradiating an ultraviolet laser 9, and the failure portion of the rough pattern is corrected by repeating local supply of the photo-hardening resin and ultraviolet hardening so that the failure portion has the same figure to a normal pattern 4. COPYRIGHT: (C)2007,JPO&INPIT
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