| 摘要 |
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the V<SUB>DD </SUB>supply voltage and the p-substrate is coupled to a V<SUB>SS </SUB>reference voltage. A dielectric region can be located between the emitter and collector (in the p-well).
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