| 摘要 |
<p>1,079,204. Semi-conductor devices. HUGHES AIRCRAFT CO. Dec. 1, 1964 [Dec. 24, 1963], No. 48864/64. Heading H1K. A thin film electrode 6 is disposed within a film 8 of semi-insulator material (such as cadmium sulphide or lightly-doped silicon) which carries two further electrodes 2, 4 on opposite surfaces thereof. The electrodes may be of metal or may consist of degeneratively doped portions of the semi-insulator material, the central electrode 6 being electrically isolated from the surrounding material by a PN junction or a coating of silicon oxide (Fig. 4, not shown) or by virtue of being made of a metal which does not inject charge carriers into the semi-insulator material. Embodiments described include an active device having the central electrode 6 as control grid (Figs. 5a, 5b, and 6, not shown) and a high-frequency transmission line as shown in Fig. 1. In the latter case the central conductor 6 may be extended to form an electrode of an active device formed on the same substrate 7 of glass or semi-insulator material (Fig. 3, not shown).</p> |
